N-CHANNEL POWER MOSFET featuring 300V drain-to-source breakdown voltage and 54A continuous drain current. This through-hole component offers a low 60mΩ Rds On resistance and 300W maximum power dissipation. Designed for demanding applications, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 40ns turn-on delay and 35ns fall time. Packaged in a TO-247-3 configuration, this RoHS compliant device is suitable for high-power switching and amplification.
PackageTO-247-3
Current Rating54A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STW54NK30Z technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
54A
Current Rating
54A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
300V
Fall Time
35ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
4.96nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
60mR
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
116ns
Turn-On Delay Time
40ns
DC Rated Voltage
300V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW54NK30Z Datasheet
Download the complete datasheet for Stmicroelectronics STW54NK30Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.