Stmicroelectronics
STW54NM65ND
N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Stmicroelectronics STW54NM65ND technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 49A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 65MR |
| Fall Time | 98ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 6.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 152ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW54NM65ND Datasheet
Download the complete datasheet for Stmicroelectronics STW54NM65ND to view detailed technical specifications.
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