Stmicroelectronics
STW55NM60N
51A, 600V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, ROHS COMPLIANT, TO-247, 3 PIN
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Stmicroelectronics STW55NM60N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 60MR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 225ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW55NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW55NM60N to view detailed technical specifications.
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