N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 51A continuous drain current. Offers 60mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247 package, with a maximum power dissipation of 350W. Includes a fast diode and operates within a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Stmicroelectronics STW55NM60ND technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 60MR |
| Fall Time | 96ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 188ns |
| Turn-On Delay Time | 33ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW55NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STW55NM60ND to view detailed technical specifications.
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