N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. This through-hole component offers a low 63mΩ maximum drain-source on-resistance and 250W power dissipation. Designed for high-efficiency switching, it operates within a -55°C to 150°C temperature range and is housed in a TO-247 package. Key switching characteristics include a 19ns fall time and 73ns turn-on delay.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power250W
Quick Jump:
Technical Specifications
Stmicroelectronics STW57N65M5 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
42A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
63mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
63mR
Fall Time
19ns
Gate to Source Voltage (Vgs)
25V
Height
20.15mm
Input Capacitance
4.2nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
63mR
RoHS Compliant
Yes
Series
MDmesh™ V
Turn-Off Delay Time
12ns
Turn-On Delay Time
73ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW57N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STW57N65M5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
