N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 65A continuous drain current. This MDmesh™ II device offers a low 0.04 Ohm typical drain-to-source resistance, with a maximum of 49mR. Designed for through-hole mounting in a TO-247 package, it supports a maximum power dissipation of 450W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and a 210ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power350W
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Technical Specifications
Stmicroelectronics STW62NM60N technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.15mm |
| Input Capacitance | 5.8nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350W |
| Rds On Max | 49mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 30ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW62NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STW62NM60N to view detailed technical specifications.
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