N-channel Power MOSFET featuring 800 V drain-source voltage and a low 0.07 Ohm typical on-resistance. This device offers a continuous drain current capability of 46 A, packaged in a TO-247 housing. Designed for high-efficiency power switching applications.
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Technical Specifications
Stmicroelectronics STW65N80K5 technical specifications.
Compliance
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Stmicroelectronics STW65N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STW65N80K5 to view detailed technical specifications.
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