N-channel SuperMESH3™ power MOSFET featuring 1200V drain-source breakdown voltage and 6A continuous drain current. Offers 2.4 Ohm maximum drain-source on-resistance at a nominal Vgs of 4V. Designed for through-hole mounting in a TO-247 package with a maximum power dissipation of 150W. Includes Zener protection and operates within a temperature range of -55°C to 150°C.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
Quick Jump:
Technical Specifications
Stmicroelectronics STW6N120K3 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 2.4R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 2.4R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.15mm |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Length | 15.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 2.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 30ns |
| Width | 5.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW6N120K3 Datasheet
Download the complete datasheet for Stmicroelectronics STW6N120K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
