N-channel power MOSFET featuring 200V drain-source breakdown voltage and 75A continuous drain current. This through-hole component offers a low 34mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 190W. Operating temperature range spans from -50°C to 150°C. Packaged in a TO-247-3, this RoHS compliant device exhibits a 3.26nF input capacitance and fast switching characteristics with a 29ns fall time.
PackageTO-247-3
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW75N20 technical specifications.
General
Package/Case
TO-247-3
Continuous Drain Current (ID)
75A
Current Rating
75A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
200V
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.26nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
190W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
34mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
75ns
Turn-On Delay Time
53ns
DC Rated Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW75N20 Datasheet
Download the complete datasheet for Stmicroelectronics STW75N20 to view detailed technical specifications.
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