N-channel STripFET™ Power MOSFET, featuring a 300V drain-source breakdown voltage and 60A continuous drain current. This through-hole component offers a low 45mΩ maximum drain-source on-resistance and a low gate charge. Designed for high-power applications, it boasts a maximum power dissipation of 320W and operates within a temperature range of -55°C to 150°C. Packaged in a TO-247, this RoHS compliant MOSFET is ideal for demanding switching applications.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power320W
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Technical Specifications
Stmicroelectronics STW75NF30 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
300V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
300V
Drain-source On Resistance-Max
45mR
Fall Time
101ns
Gate to Source Voltage (Vgs)
20V
Height
20.15mm
Input Capacitance
5.93nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
320W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
320W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
141ns
Turn-On Delay Time
115ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW75NF30 Datasheet
Download the complete datasheet for Stmicroelectronics STW75NF30 to view detailed technical specifications.
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