N-channel SuperMESH3 Power MOSFET featuring 950V drain-source breakdown voltage and 7.2A continuous drain current. Offers a maximum on-resistance of 1.35 Ohms and 150W power dissipation. Designed for through-hole mounting in a TO-247 package, this Zener-protected MOSFET operates from -55°C to 150°C. Key switching parameters include a 14ns turn-on delay and 23ns fall time.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STW7N95K3 technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
7.2A
Drain to Source Breakdown Voltage
950V
Drain to Source Resistance
1.35R
Drain to Source Voltage (Vdss)
950V
Drain-source On Resistance-Max
1.35R
Fall Time
23ns
Gate to Source Voltage (Vgs)
30V
Height
20.15mm
Input Capacitance
1.031nF
Lead Free
Lead Free
Length
15.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
1.35R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
36ns
Turn-On Delay Time
14ns
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW7N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STW7N95K3 to view detailed technical specifications.
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