N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 5.8A continuous drain current. This through-hole component offers a low 1.56 Ohm typical drain-source on-resistance and 140W maximum power dissipation. Encased in a TO-247 package, it operates within a -55°C to 150°C temperature range and includes fast switching characteristics with a 20ns fall time. RoHS compliant and lead-free.
Stmicroelectronics STW7NK90Z technical specifications.
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