The STW8NB80 is a high-power N-channel MOSFET with a breakdown voltage of 800V and a continuous drain current of 7.5A. It features a power dissipation of 170W and a drain to source resistance of 1.6 ohms. The device is packaged in a TO-247 case with three pins and is RoHS compliant. It operates over a temperature range of -65°C to 150°C.
PackageTO-247
PolarityN-CHANNEL
Power170W
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Technical Specifications
Stmicroelectronics STW8NB80 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.6R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 170W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STW8NB80 Datasheet
Download the complete datasheet for Stmicroelectronics STW8NB80 to view detailed technical specifications.
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