The STW8NB90 is a high-power N-channel MOSFET with a breakdown voltage of 900V and a continuous drain current of 8A. It features a drain to source resistance of 1.45 ohms and a power dissipation of 200W. The device is packaged in a TO-247 package and has a temperature range of -65°C to 150°C. It is not RoHS compliant.
PackageTO-247
PolarityN-CHANNEL
Power200W
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Technical Specifications
Stmicroelectronics STW8NB90 technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.45R |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STW8NB90 Datasheet
Download the complete datasheet for Stmicroelectronics STW8NB90 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.