N-CHANNEL POWER MOSFET with 700V drain-to-source breakdown voltage and 7.5A continuous drain current. Features 1.2 ohm Rds On, 156W power dissipation, and 1.37nF input capacitance. Operates within a -55°C to 150°C temperature range. Packaged in a TO-247 through-hole mount. RoHS compliant.
PackageTO-247
Current Rating7.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STW9NK70Z technical specifications.
General
Package/Case
TO-247
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
700V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
700V
Fall Time
13ns
Gate to Source Voltage (Vgs)
30V
Height
5.3mm
Input Capacitance
1.37nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
156W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
156W
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
45ns
Turn-On Delay Time
22ns
DC Rated Voltage
700V
Width
20.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STW9NK70Z Datasheet
Download the complete datasheet for Stmicroelectronics STW9NK70Z to view detailed technical specifications.
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