N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 84A continuous drain current. Offers a low 0.024 Ohm typical drain-source resistance, with a maximum of 0.029 Ohm. Packaged in a TO-247 long leads format for through-hole mounting. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 450W. Includes a fall time of 29ns and input capacitance of 8.825nF.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power450W
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Technical Specifications
Stmicroelectronics STWA88N65M5 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 8.825nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Radiation Hardening | No |
| Rds On Max | 29mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STWA88N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STWA88N65M5 to view detailed technical specifications.
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