NPN Bipolar Junction Transistor (BJT) designed for small signal applications. Features an 80V collector-emitter breakdown voltage and a 1.5A maximum collector current. Offers a minimum DC current gain (hFE) of 140 and a transition frequency of 50MHz. Packaged in a TO-92 plastic through-hole mount, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 900mW.
Frequency50MHz
PackageTO-92
Current Rating1.5A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STX715 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
hFE Min
140
Lead Free
Lead Free
Max Breakdown Voltage
80V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
900mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Bulk
Polarity
NPN
Power Dissipation
900mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
80V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STX715 Datasheet
Download the complete datasheet for Stmicroelectronics STX715 to view detailed technical specifications.
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