PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Voltage (VCEO) and 1.5A Max Collector Current. Offers a minimum DC current gain (hFE) of 140 and a transition frequency of 50MHz. Packaged in a RoHS compliant TO-92 through-hole mount.
Frequency50MHz
PackageTO-92
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics STX817A technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 4.95mm |
| hFE Min | 140 |
| Length | 4.95mm |
| Max Collector Current | 1.5A |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 900mW |
| Mount | Through Hole |
| Package Quantity | 2500 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STX817 |
| Termination | Through Hole |
| Transition Frequency | 50MHz |
| Width | 3.94mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STX817A Datasheet
Download the complete datasheet for Stmicroelectronics STX817A to view detailed technical specifications.
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