PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features 80V Collector-Emitter Voltage (VCEO) and 1.5A Max Collector Current. Offers a minimum DC current gain (hFE) of 140 and a transition frequency of 50MHz. Packaged in a RoHS compliant TO-92 through-hole mount.
Frequency50MHz
PackageTO-92
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics STX817A technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
50MHz
Height
4.95mm
hFE Min
140
Length
4.95mm
Max Collector Current
1.5A
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
900mW
Mount
Through Hole
Package Quantity
2500
Packaging
Bulk
Polarity
PNP
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STX817
Termination
Through Hole
Transition Frequency
50MHz
Width
3.94mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STX817A Datasheet
Download the complete datasheet for Stmicroelectronics STX817A to view detailed technical specifications.
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