N-CHANNEL POWER MOSFET, 200V Drain-to-Source Voltage, 100A Continuous Drain Current, and 24mΩ Drain-to-Source Resistance. Features a 450W maximum power dissipation and operates within a temperature range of -65°C to 150°C. This through-hole component is housed in a TO-247-3 package and is RoHS compliant. Turn-on delay time is 42ns with a fall time of 140ns.
Stmicroelectronics STY100NS20FD technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 100A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Turn-On Delay Time | 42ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STY100NS20FD to view detailed technical specifications.
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