Stmicroelectronics
STY105NM50N
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power625W
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Technical Specifications
Stmicroelectronics STY105NM50N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 9.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 353ns |
| Turn-On Delay Time | 47ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY105NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STY105NM50N to view detailed technical specifications.
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