N-channel Power MOSFET featuring 650V drain-source voltage and 96A continuous drain current. Offers a low 19mΩ typical drain-source on-resistance and a maximum of 22mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 625W. Packaged in a TO-247-3 through-hole mount, this component is RoHS compliant.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power625W
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Technical Specifications
Stmicroelectronics STY112N65M5 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 96A |
| Drain to Source Breakdown Voltage | 710V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 140ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.3mm |
| Input Capacitance | 16.87nF |
| Lead Free | Lead Free |
| Length | 5.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 267ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY112N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STY112N65M5 to view detailed technical specifications.
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