N-channel power MOSFET featuring 650V drain-source breakdown voltage and 130A continuous drain current. Offers a low 0.014 Ohm typical drain-source on-resistance, with a maximum of 17mR. Designed for through-hole mounting in a TO-247-3 package, this component boasts a maximum power dissipation of 625W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 37ns fall time and 295ns turn-on/turn-off delay times.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power625mW
Quick Jump:
Technical Specifications
Stmicroelectronics STY139N65M5 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 17mR |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.3mm |
| Input Capacitance | 15.6nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625mW |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Turn-Off Delay Time | 295ns |
| Turn-On Delay Time | 295ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY139N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STY139N65M5 to view detailed technical specifications.
No datasheet is available for this part.