N-channel power MOSFET featuring 100V drain-source breakdown voltage and 140A continuous drain current. Offers a low 11mΩ drain-source on-resistance (Rds On Max) and 450W maximum power dissipation. Designed for through-hole mounting in a TO-247-3 package, operating from -55°C to 175°C. Includes a 4V threshold voltage and 12.6nF input capacitance, with a fall time of 270ns.
PackageTO-247-3
Current Rating140A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STY140NS10 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 140A |
| Current Rating | 140A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 270ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 450W |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MESH OVERLAY™ |
| Threshold Voltage | 4V |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY140NS10 Datasheet
Download the complete datasheet for Stmicroelectronics STY140NS10 to view detailed technical specifications.
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