N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 74A continuous drain current. This MDmesh™ II device offers a low 35mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247-3 package, it operates from -55°C to 150°C with a maximum power dissipation of 447W. Key electrical characteristics include a 3V threshold voltage, 10.1nF input capacitance, and switching times of 50ns turn-on delay and 440ns turn-off delay.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power447W
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Technical Specifications
Stmicroelectronics STY80NM60N technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 74A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 20.3mm |
| Input Capacitance | 10.1nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 447W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 447W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 440ns |
| Turn-On Delay Time | 50ns |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STY80NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STY80NM60N to view detailed technical specifications.
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