NPN Darlington bipolar junction transistor featuring a 100V collector-emitter voltage and a 2A continuous collector current. This through-hole component offers a maximum power dissipation of 2W and a minimum hFE of 1000. Packaged in a TO-220AB case, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics TIP112 technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.211644oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics TIP112 Datasheet
Download the complete datasheet for Stmicroelectronics TIP112 to view detailed technical specifications.
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