PNP Darlington bipolar junction transistor (BJT) featuring a 60V collector-emitter breakdown voltage and a 2A maximum collector current. This component offers a high minimum DC current gain (hFE) of 1000 and a maximum power dissipation of 2W. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Stmicroelectronics TIP115 technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 2.5V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -60V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics TIP115 Datasheet
Download the complete datasheet for Stmicroelectronics TIP115 to view detailed technical specifications.
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