
NPN Darlington bipolar junction transistor featuring 80V collector-emitter breakdown voltage and a 5A maximum collector current. This through-hole component offers a high DC current gain (hFE) of 1000 and a maximum power dissipation of 65W. Packaged in a TO-220AB case, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Stmicroelectronics TIP121 technical specifications.
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 4V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 4V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 9.15mm |
| hFE Min | 1000 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 65W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics TIP121 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
