NPN bipolar junction transistor (BJT) in a TO-220 package, designed for general-purpose applications. Features a maximum collector current of 1A and a collector-emitter breakdown voltage of 100V. Offers a minimum DC current gain (hFE) of 15 and a maximum power dissipation of 2W. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics TIP29C technical specifications.
General
| Package/Case | TO-220 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 700mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 9.15mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics TIP29C Datasheet
Download the complete datasheet for Stmicroelectronics TIP29C to view detailed technical specifications.
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