NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 100V collector-emitter breakdown voltage and a 3A continuous collector current rating. Maximum power dissipation is 2W, with a low collector-emitter saturation voltage of 1.2V. Housed in a TO-220 package with through-hole mounting. Operating temperature range spans from -65°C to 150°C.
PackageTO-220
Current Rating3A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics TIP31C technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.2V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.2V
Current Rating
3A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
3MHz
Height
9.15mm
hFE Min
10
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics TIP31C Datasheet
Download the complete datasheet for Stmicroelectronics TIP31C to view detailed technical specifications.
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