NPN Silicon Power Transistor, TO-247 package, offering a 10A continuous collector current and 100V collector-emitter breakdown voltage. Features a maximum power dissipation of 80W and a transition frequency of 3MHz. Collector-emitter saturation voltage is 1V, with a minimum DC current gain (hFE) of 20. Operating temperature range spans from -65°C to 150°C. Through-hole mount design, RoHS compliant.
Frequency3MHz
PackageTO-247
Current Rating10A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics TIP33C technical specifications.
General
Package/Case
TO-247
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
4V
Current Rating
10A
Emitter Base Voltage (VEBO)
7V
Frequency
3MHz
Gain Bandwidth Product
3MHz
Height
20.15mm
hFE Min
20
Lead Free
Lead Free
Length
15.75mm
Max Collector Current
10A
Max Frequency
3MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Number of Elements
1
Package Quantity
300
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
80W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
DC Rated Voltage
140V
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics TIP33C Datasheet
Download the complete datasheet for Stmicroelectronics TIP33C to view detailed technical specifications.
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