NPN bipolar junction transistor (BJT) with a maximum collector current of 6A and a maximum power dissipation of 65W. Features a collector-emitter voltage (VCEO) of 100V and a collector-base voltage (VCBO) of 100V. This through-hole component is housed in a TO-220 package, offering a minimum hFE of 15 and a maximum collector-emitter saturation voltage of 1.5V. Operating temperature range spans from -65°C to 150°C, with RoHS compliance.
PackageTO-220
Current Rating6A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics TIP41C technical specifications.
General
Package/Case
TO-220
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.5V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Current Rating
6A
Emitter Base Voltage (VEBO)
5V
Height
9.15mm
hFE Min
15
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
65W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
65W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics TIP41C Datasheet
Download the complete datasheet for Stmicroelectronics TIP41C to view detailed technical specifications.
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