Fully Autoprotected Power MOSFET, an N-channel device in a D2PAK package, offers a 70V drain-to-source breakdown voltage and 10A continuous drain current. This low-side driver features a 100mΩ drain-to-source resistance and a 7A maximum output current. Integrated fault protection includes over-voltage and over-temperature capabilities, with a maximum power dissipation of 50W. Operating from -55°C to 150°C, this surface-mount component is RoHS compliant and lead-free.
PackageD2PAK
Current250uA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VNB10N07 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
100mR
Fall Time
100ns
Fault Protection
Over Voltage, Over Temperature
Height
4.6mm
Interface
On/Off
Lead Free
Lead Free
Length
10.28mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Output Current
7A
Max Power Dissipation
50W
Mount
Surface Mount
Number of Outputs
1
Output Configuration
Low Side
Output Current
7A
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
50W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET™, VIPower™
Supply Current
250uA
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VNB10N07 Datasheet
Download the complete datasheet for Stmicroelectronics VNB10N07 to view detailed technical specifications.
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