STMICROELECTRONICS

VNB10N07

Datasheet

70V 10A N-CH Power MOSFET Driver, D2PAK, 100mR

Stmicroelectronics

VNB10N07

Name: VNB10N07 Stmicroelectronics
Brand: Stmicroelectronics
SKU: VNB10N07

70V 10A N-CH Power MOSFET Driver, D2PAK, 100mR

Fully Autoprotected Power MOSFET, an N-channel device in a D2PAK package, offers a 70V drain-to-source breakdown voltage and 10A continuous drain current. This low-side driver features a 100mΩ drain-to-source resistance and a 7A maximum output current. Integrated fault protection includes over-voltage and over-temperature capabilities, with a maximum power dissipation of 50W. Operating from -55°C to 150°C, this surface-mount component is RoHS compliant and lead-free.

PackageD2PAK

Current250uA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics VNB10N07 technical specifications.

General

Package/Case	D2PAK
Continuous Drain Current (ID)	10A
Drain to Source Breakdown Voltage	70V
Drain to Source Resistance	100mR
Fall Time	100ns
Fault Protection	Over Voltage, Over Temperature
Height	4.6mm
Interface	On/Off
Lead Free	Lead Free
Length	10.28mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Output Current	7A
Max Power Dissipation	50W
Mount	Surface Mount
Number of Outputs	1
Output Configuration	Low Side
Output Current	7A
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	50W
Radiation Hardening	No
RoHS Compliant	Yes
Series	OMNIFET™, VIPower™
Supply Current	250uA
Width	9.35mm