
High-performance N-channel MOSFET power driver in a D2PAK surface-mount package. Features a 42V drain-to-source breakdown voltage and 14A continuous drain current, with a low 35mΩ drain-to-source resistance. Offers integrated over-voltage and over-temperature fault protection, operating with a 18V supply voltage and providing up to 19A output current. Ideal for low-side switching applications requiring robust power management.
Stmicroelectronics VNB28N04-E technical specifications.
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