
High-performance N-channel MOSFET power driver in a D2PAK surface-mount package. Features a 42V drain-to-source breakdown voltage and 14A continuous drain current, with a low 35mΩ drain-to-source resistance. Offers integrated over-voltage and over-temperature fault protection, operating with a 18V supply voltage and providing up to 19A output current. Ideal for low-side switching applications requiring robust power management.
Stmicroelectronics VNB28N04-E technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 42V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 51V |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Max Output Current | 19A |
| Max Power Dissipation | 83W |
| Max Supply Current | 250uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Operating Supply Voltage | 18V |
| Output Configuration | Low Side |
| Output Current | 19A |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OMNIFET™, VIPower™ |
| Supply Current | 250uA |
| Threshold Voltage | 3V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics VNB28N04-E to view detailed technical specifications.
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