N-channel power MOSFET with 70V drain-source breakdown voltage and 35A continuous drain current. Features low 10mR drain-source resistance and 13mR on-state resistance. Surface mount D2PAK package with 125W maximum power dissipation. Includes over-voltage and over-temperature fault protection. Operates from an 18V supply voltage with a 100uA supply current.
PackageD2PAK
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics VNB35NV0413TR technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 70V |
| Fault Protection | Over Voltage, Over Temperature |
| Gate to Source Voltage (Vgs) | 20V |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 30A |
| Max Power Dissipation | 125W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| On-State Resistance | 13mR |
| Operating Supply Voltage | 18V |
| Output Configuration | Low Side |
| Output Current | 30A |
| Output Current per Channel | 30A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™ |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNB35NV0413TR Datasheet
Download the complete datasheet for Stmicroelectronics VNB35NV0413TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
