N-channel power MOSFET with 70V drain-source breakdown voltage and 35A continuous drain current. Features low 10mR drain-source resistance and 13mR on-state resistance. Surface mount D2PAK package with 125W maximum power dissipation. Includes over-voltage and over-temperature fault protection. Operates from an 18V supply voltage with a 100uA supply current.
PackageD2PAK
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VNB35NV0413TR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
35A
Drain to Source Breakdown Voltage
70V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
70V
Fault Protection
Over Voltage, Over Temperature
Gate to Source Voltage (Vgs)
20V
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
30A
Max Power Dissipation
125W
Max Supply Current
100uA
Mount
Surface Mount
Number of Outputs
1
On-State Resistance
13mR
Operating Supply Voltage
18V
Output Configuration
Low Side
Output Current
30A
Output Current per Channel
30A
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET II™
Supply Current
100uA
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VNB35NV0413TR Datasheet
Download the complete datasheet for Stmicroelectronics VNB35NV0413TR to view detailed technical specifications.
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