PackageTO-252
Current100uA
MountingSurface Mount
Power35W
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Technical Specifications
Stmicroelectronics VND1NV0413TR technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 250mR |
| Gate to Source Voltage (Vgs) | 20V |
| Max Output Current | 1.7A |
| Max Power Dissipation | 35W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| On-State Resistance | 250mR |
| Output Current | 1.7A |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™ |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND1NV0413TR Datasheet
Download the complete datasheet for Stmicroelectronics VND1NV0413TR to view detailed technical specifications.
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