
N-channel fully autopreotected power MOSFET driver with a 42V drain-to-source breakdown voltage and 7A continuous drain current. Features low side output configuration, 140mR drain-to-source resistance, and 4A maximum output current. Offers over-voltage and over-temperature fault protection with on/off interface. Surface mountable in a TO-252-3 package, operating from -40°C to 150°C with 60W maximum power dissipation.
Stmicroelectronics VND7N0413TR technical specifications.
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