
N-CHANNEL, low-side power MOSFET driver with 40V drain-to-source breakdown voltage and 6A continuous output current. Features 60mR drain-to-source resistance and 60W maximum power dissipation. Offers over-voltage and over-temperature fault protection with simple on/off interface. Surface mountable in a DPAK package, operating from -40°C to 150°C.
Stmicroelectronics VND7NV04 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 42V |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 6A |
| Max Power Dissipation | 60W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 6A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| DC Rated Voltage | 40V |
| Weight | 0.01164oz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics VND7NV04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.