N-CHANNEL, low-side power MOSFET driver with 40V drain-to-source breakdown voltage and 6A continuous output current. Features 60mR drain-to-source resistance and 60W maximum power dissipation. Offers over-voltage and over-temperature fault protection with simple on/off interface. Surface mountable in a DPAK package, operating from -40°C to 150°C.
Stmicroelectronics VND7NV04 technical specifications.
Download the complete datasheet for Stmicroelectronics VND7NV04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.