N-Channel Power MOSFET driver with integrated fault protection. Features 40V drain-source breakdown voltage and 17A continuous drain current. Offers 60mΩ drain-source resistance and 6A maximum output current. Includes over-voltage and over-temperature fault protection. Packaged in TO-251-3 for through-hole mounting.
PackageTO-251-3
Current100uA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VND7NV04-1-E technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
42V
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
6A
Max Power Dissipation
60W
Max Supply Current
100uA
Mount
Through Hole
Number of Outputs
1
Output Configuration
Low Side
Output Current
6A
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VND7NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND7NV04-1-E to view detailed technical specifications.
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