N-Channel Power MOSFET driver with integrated fault protection. Features 40V drain-source breakdown voltage and 17A continuous drain current. Offers 60mΩ drain-source resistance and 6A maximum output current. Includes over-voltage and over-temperature fault protection. Packaged in TO-251-3 for through-hole mounting.
PackageTO-251-3
Current100uA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics VND7NV04-1-E technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 42V |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 6A |
| Max Power Dissipation | 60W |
| Max Supply Current | 100uA |
| Mount | Through Hole |
| Number of Outputs | 1 |
| Output Configuration | Low Side |
| Output Current | 6A |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VND7NV04-1-E Datasheet
Download the complete datasheet for Stmicroelectronics VND7NV04-1-E to view detailed technical specifications.
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