N-channel MOSFET transistor in SOT-223 surface mount package. Features 40V drain-to-source breakdown voltage and 120mΩ on-state resistance. Continuous drain current is 3.5A with a maximum output current of 5A. Operates within a temperature range of -40°C to 150°C, with a maximum power dissipation of 7W. RoHS compliant and lead-free.
Stmicroelectronics VNN3NV04TR-E technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 120mR |
| Fall Time | 250ns |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 5A |
| Max Power Dissipation | 7W |
| Max Supply Current | 100uA |
| Max Supply Voltage | 55V |
| Min Supply Voltage | 40V |
| Mount | Surface Mount |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| On-State Resistance | 120mR |
| Output Current | 3.5A |
| Output Current per Channel | 3.5A |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Power Dissipation | 7W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 1.5A |
| Turn-Off Delay Time | 1350ns |
| Turn-On Delay Time | 300ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics VNN3NV04TR-E to view detailed technical specifications.
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