
Fully autopreotected power MOSFET driver with 70V drain-to-source breakdown voltage and 10A continuous drain current. Features 100mΩ drain-to-source resistance and 7A max output current. Integrated over-voltage and over-temperature fault protection. Through-hole mounted in a TO-220-3 package, this component offers 50W max power dissipation and operates at up to 18V.
Stmicroelectronics VNP10N07 technical specifications.
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