
N-channel power MOSFET with 40V drain-to-source breakdown voltage and 70V drain-to-source voltage. Features 18A continuous drain current, 30A output current, and 45A max output current. Boasts low 13mR on-state resistance and 125W power dissipation. Packaged in TO-220-3 for through-hole mounting, operating from an 18V supply voltage.
Stmicroelectronics VNP35NV04-E technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 70V |
| Fall Time | 1500ns |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 45A |
| Max Power Dissipation | 125W |
| Max Supply Current | 100uA |
| Mount | Through Hole |
| Number of Outputs | 1 |
| On-State Resistance | 13mR |
| Operating Supply Voltage | 18V |
| Output Current | 30A |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™ |
| Supply Current | 100uA |
| Threshold Voltage | 2.5V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics VNP35NV04-E to view detailed technical specifications.
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