N-channel peripheral driver with 1.7A continuous drain current and 40V drain-to-source breakdown voltage. Features 250mR on-state resistance, 3.5A max output current, and 8.3W power dissipation. Operates across a -40°C to 150°C temperature range with 200ns fall time and 350ns turn-off delay. This surface mount SOIC package driver is RoHS compliant.
PackageSOIC
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics VNS1NV04 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 250mR |
| Fall Time | 200ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 3.5A |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Outputs | 1 |
| On-State Resistance | 250mR |
| Output Current | 1.7A |
| Output Current per Channel | 1.7A |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
| Turn-Off Delay Time | 350ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNS1NV04 Datasheet
Download the complete datasheet for Stmicroelectronics VNS1NV04 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
