N-channel power MOSFET driver with 40V drain-to-source breakdown voltage and 30A continuous drain current. Features 10mΩ drain-to-source resistance and 125W maximum power dissipation. Offers over-voltage and over-temperature fault protection with an on/off interface. Operates from an 18V supply voltage and supports surface mount packaging.
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics VNV35NV04-E technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 1500ns |
| Fault Protection | Over Voltage, Over Temperature |
| Interface | On/Off |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 30A |
| Max Power Dissipation | 125W |
| Max Supply Current | 100uA |
| Mount | Surface Mount |
| Number of Outputs | 1 |
| Operating Supply Voltage | 18V |
| Output Configuration | Low Side |
| Output Current | 30A |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | OMNIFET II™, VIPower™ |
| Supply Current | 100uA |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNV35NV04-E Datasheet
Download the complete datasheet for Stmicroelectronics VNV35NV04-E to view detailed technical specifications.
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