N-channel power MOSFET with 40V drain-source breakdown voltage and 30A continuous drain current. Features 10mΩ drain-source resistance and 125W power dissipation. This hot-swap controller offers over-voltage and over-temperature fault protection with an on/off interface. Designed for surface mount applications with a 18V operating supply voltage.
Current100uA
MountingSurface Mount
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics VNV35NV04TR-E technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
40V
Fall Time
1500ns
Fault Protection
Over Voltage, Over Temperature
Interface
On/Off
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Output Current
30A
Max Power Dissipation
125W
Max Supply Current
100uA
Mount
Surface Mount
Number of Outputs
1
Operating Supply Voltage
18V
Output Configuration
Low Side
Output Current
30A
Package Quantity
600
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
RoHS Compliant
Yes
Series
OMNIFET II™, VIPower™
Supply Current
100uA
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics VNV35NV04TR-E Datasheet
Download the complete datasheet for Stmicroelectronics VNV35NV04TR-E to view detailed technical specifications.
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