Glass-passivated silicon rectifier diode designed for 1.0 A average forward current and up to 1000 V repetitive peak reverse voltage. It is supplied in a DO-41 molded plastic axial package with color-band cathode marking and can be mounted in any position. The device specifies 1.0 V maximum forward voltage at 1.0 A, 30 A peak forward surge current, and low reverse current of 5 µA at 25 °C or 50 µA at 100 °C. Operating limits include junction and storage temperature ranges from -65 °C to +175 °C, typical junction capacitance of 8 pF, and typical thermal resistance of 45 °C/W.
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| Maximum repetitive peak reverse voltage | 1000V |
| Maximum RMS voltage | 700V |
| Maximum DC blocking voltage | 1000V |
| Maximum average forward current | 1.0A |
| Peak forward surge current | 30A |
| Maximum forward voltage | 1.0V |
| Forward current test condition | 1.0A |
| Maximum reverse current at 25°C | 5.0µA |
| Maximum reverse current at 100°C | 50µA |
| Typical junction capacitance | 8pF |
| Typical thermal resistance junction-to-ambient | 45°C/W |
| Junction temperature range | -65 to +175°C |
| Storage temperature range | -65 to +175°C |
| Weight | 0.34g |
| Case style | DO-41 molded plastic |
| Lead length minimum | 25.4mm |
| Body length | 4.2 to 5.2mm |
| Body diameter | 2.0 to 2.7mm |
| Lead diameter | 0.71 to 0.86mm |
| RoHS | Compliant |
