The BC847B is a single NPN transistor with a collector-emitter saturation voltage of 500mV and a gain bandwidth product of 100MHz. It has a maximum collector current of 100mA and a maximum power dissipation of 200mW. The transistor is packaged in a SOT-23-3 case and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOT-23-3
PolarityNPN
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Technical Specifications
Taiwan Semiconductor BC847B technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor BC847B Datasheet
Download the complete datasheet for Taiwan Semiconductor BC847B to view detailed technical specifications.
No datasheet is available for this part.