The ESH1DM RSG is a high-efficiency ultra-fast recovery rectifier featuring a 1.0 Ampere forward current and a reverse voltage rating of 200 Volts. It is designed with a glass passivated chip junction and offers an ultra-fast recovery time of 15ns for high-efficiency switching. The device is housed in a low-profile Micro SMA surface mount package, making it suitable for automated placement and high-density PCB layouts.
Taiwan Semiconductor ESH1DM RSG technical specifications.
| Maximum Repetitive Peak Reverse Voltage | 200V |
| Maximum RMS Voltage | 140V |
| Maximum Average Forward Rectified Current | 1.0A |
| Peak Forward Surge Current (8.3ms single half sine-wave) | 30A |
| Maximum Reverse Recovery Time | 15ns |
| Maximum Forward Voltage at 1A | 0.95V |
| Typical Junction Capacitance | 15pF |
| Operating Junction Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Halogen-free | According to IEC 61249-2-21 |
| Moisture Sensitivity Level | MSL-1 |
No datasheet is available for this part.
