The GBL10 diode from Taiwan Semiconductor features a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It can withstand a maximum repetitive reverse voltage of 1kV and a maximum surge current of 150A. The diode is available in a package quantity of 1000 and is packaged in rail/tube format. It is RoHS compliant and suitable for through hole mounting.
Taiwan Semiconductor GBL10 technical specifications.
| Forward Current | 4A |
| Height | 11.3mm |
| Length | 20.3mm |
| Max Forward Surge Current (Ifsm) | 150A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Surge Current | 150A |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Width | 3.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
