This device is a 60 V N-channel MOSFET in a PDFN56 package. It is rated for 70 A continuous drain current at case temperature of 25°C and 240 A pulsed drain current. The maximum drain-source on-resistance is 5.8 mΩ at 10 V gate drive, and total gate charge is 118 nC. It operates over a junction temperature range of -55°C to +150°C and has 1.2°C/W junction-to-case thermal resistance. The available datasheet marks the part as not recommended.
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Taiwan Semiconductor TSM058N06PQ56 technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 70A |
| Continuous Drain Current (Ta=25°C) | 16A |
| Pulsed Drain Current | 240A |
| Drain-Source On-Resistance | 5.8 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 118 typnC |
| Input Capacitance | 4871 typpF |
| Output Capacitance | 243 typpF |
| Reverse Transfer Capacitance | 124 typpF |
| Turn-On Delay Time | 25 typns |
| Turn-On Rise Time | 19 typns |
| Turn-Off Delay Time | 85 typns |
| Turn-Off Fall Time | 43 typns |
| Source-Drain Diode Forward Voltage | 1.3 maxV |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 1.2°C/W |
| Thermal Resistance Junction-to-Ambient | 62°C/W |
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