This device is a 60 V N-channel power MOSFET in a TO-220 package with 111 A continuous drain current capability at TC = 25°C. It provides a maximum drain-source on-resistance of 6 mΩ at VGS = 10 V and 7.8 mΩ at VGS = 4.5 V, with total gate charge of 52 nC at 4.5 V. The MOSFET is intended for BLDC motor control, battery power management, DC-DC conversion, and secondary synchronous rectification. It operates over a -55°C to +150°C junction and storage temperature range and is specified as RoHS compliant and halogen-free.
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Taiwan Semiconductor TSM060NB06LCZ technical specifications.
| Channel Type | N-Channel |
| Technology | Trench |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 111A |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance @ 10V Max | 6mΩ |
| Drain-Source On-Resistance @ 4.5V Max | 7.8mΩ |
| Total Gate Charge @ 10V | 107nC |
| Total Gate Charge @ 4.5V | 52nC |
| Gate-Source Charge | 18nC |
| Gate-Drain Charge | 23nC |
| Input Capacitance | 6273pF |
| Output Capacitance | 391pF |
| Reverse Transfer Capacitance | 167pF |
| Power Dissipation | 156W |
| Junction Temperature Max | 150°C |
| Operating Temperature Min | -55°C |
| RoHS | Compliant |
| Halogen Free | Yes |
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